Component information
2DB1714-13
2DB1714-13 component information and product attributes.
Product information
- Manufacturer
- Diodes Incorporated
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 270 @ 200mA, 2V
- Mfr
- Diodes Incorporated
- Power - Max
- 900 mW
- Packaging
- Tape & Reel (TR)
- Frequency - Transition
- 200MHz
- Part Status
- Obsolete
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Transistor Type
- PNP
- Mounting Type
- Surface Mount
- Current - Collector (Ic) (Max)
- 2 A
- Package / Case
- TO-243AA
- Voltage - Collector Emitter Breakdown (Max)
- 30 V
- Supplier Device Package
- SOT-89-3
- Vce Saturation (Max) @ Ib, Ic
- 370mV @ 75mA, 1.5A
- Base Product Number
- 2DB1714
- Current - Collector Cutoff (Max)
- 100nA (ICBO)
Documentation and references
Documentation can be discussed with your inquiry.
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