Component information
2N4922G
2N4922G component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 30 @ 500mA, 1V
- Mfr
- onsemi
- Power - Max
- 30 W
- Packaging
- Bulk
- Frequency - Transition
- 3MHz
- Part Status
- Active
- Operating Temperature
- -65°C ~ 150°C (TJ)
- Transistor Type
- NPN
- Mounting Type
- Through Hole
- Current - Collector (Ic) (Max)
- 1 A
- Package / Case
- TO-225AA, TO-126-3
- Voltage - Collector Emitter Breakdown (Max)
- 60 V
- Supplier Device Package
- TO-126
- Vce Saturation (Max) @ Ib, Ic
- 600mV @ 100mA, 1A
- Base Product Number
- 2N4922
- Current - Collector Cutoff (Max)
- 500µA
Documentation and references
Request a quotation
Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.
Prepare an RFQ