Component information
2N5551RLRPG
2N5551RLRPG component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 80 @ 10mA, 5V
- Mfr
- onsemi
- Power - Max
- 625 mW
- Packaging
- Tape & Box (TB)
- Frequency - Transition
- 300MHz
- Part Status
- Obsolete
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Transistor Type
- NPN
- Mounting Type
- Through Hole
- Current - Collector (Ic) (Max)
- 600 mA
- Package / Case
- TO-226-3, TO-92-3 Long Body, Formed Leads
- Voltage - Collector Emitter Breakdown (Max)
- 160 V
- Supplier Device Package
- TO-92 (TO-226)
- Vce Saturation (Max) @ Ib, Ic
- 200mV @ 5mA, 50mA
- Base Product Number
- 2N5551
- Current - Collector Cutoff (Max)
- 50nA (ICBO)
Documentation and references
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