Component information
2N6491G
2N6491G component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 20 @ 5A, 4V
- Mfr
- onsemi
- Power - Max
- 1.8 W
- Packaging
- Tube
- Frequency - Transition
- 5MHz
- Part Status
- Active
- Operating Temperature
- -65°C ~ 150°C (TJ)
- Transistor Type
- PNP
- Mounting Type
- Through Hole
- Current - Collector (Ic) (Max)
- 15 A
- Package / Case
- TO-220-3
- Voltage - Collector Emitter Breakdown (Max)
- 80 V
- Supplier Device Package
- TO-220
- Vce Saturation (Max) @ Ib, Ic
- 3.5V @ 5A, 15A
- Base Product Number
- 2N6491
- Current - Collector Cutoff (Max)
- 1mA
Documentation and references
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