Component information
2N6660
2N6660 component information and product attributes.
Product information
- Manufacturer
- Microchip Technology
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Rds On (Max) @ Id, Vgs
- 3Ohm @ 1A, 10V
- Mfr
- Microchip Technology
- Vgs(th) (Max) @ Id
- 2V @ 1mA
- Packaging
- Bag
- Vgs (Max)
- ±20V
- Part Status
- Active
- Input Capacitance (Ciss) (Max) @ Vds
- 50 pF @ 24 V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 6.25W (Tc)
- Technology
- MOSFET (Metal Oxide)
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Drain to Source Voltage (Vdss)
- 60 V
- Mounting Type
- Through Hole
- Current - Continuous Drain (Id) @ 25°C
- 410mA (Ta)
- Supplier Device Package
- TO-39
- Drive Voltage (Max Rds On, Min Rds On)
- 5V, 10V
- Package / Case
- TO-205AD, TO-39-3 Metal Can
Documentation and references
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