2N7002BKSH

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays

Manufacturer

Nexperia USA Inc.

Part Status

Active

Vgs(th) (Max) @ Id

2.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

0.6nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

50pF @ 10V

Power - Max

295mW (Ta), 1.04W (Tc)

Technology

MOSFET (Metal Oxide)

Operating Temperature

150°C (TJ)

Configuration

2 N-Channel (Dual)

Grade

Automotive

FET Feature

Logic Level Gate

Qualification

AEC-Q101

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

300mA (Ta)

Rds On (Max) @ Id, Vgs

1.6Ohm @ 500mA, 10V

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

6-TSSOP

Packaging

Tape & Reel (TR); Cut Tape (CT)