Component information

2N7002WT1G

2N7002WT1G component information and product attributes.

Product information

Manufacturer
onsemi
Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Vgs(th) (Max) @ Id
2.5V @ 250µA
Mfr
onsemi
Gate Charge (Qg) (Max) @ Vgs
0.7 nC @ 4.5 V
Packaging
Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Vgs (Max)
±20V
Part Status
Active
Input Capacitance (Ciss) (Max) @ Vds
24.5 pF @ 20 V
FET Type
N-Channel
Power Dissipation (Max)
280mW (Tj)
Technology
MOSFET (Metal Oxide)
Operating Temperature
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)
60 V
Mounting Type
Surface Mount
Current - Continuous Drain (Id) @ 25°C
310mA (Ta)
Supplier Device Package
SC-70-3 (SOT323)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Package / Case
SC-70, SOT-323
Rds On (Max) @ Id, Vgs
1.6Ohm @ 500mA, 10V
Base Product Number
2N7002

Documentation and references

Manufacturer document ↗

Distributor reference ↗

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