Component information
2SA1190DTZ-E
Renesas Electronics Corporation 2SA1190DTZ-E: Single Bipolar Transistors. Package / Case: TO-226-3, TO-92-3 (TO-226AA). Supplier Device Package: TO-92.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
- Mfr
- Renesas Electronics Corporation
- Part Status
- Active
- Current - Collector Cutoff (Max)
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 250 @ 2mA, 12V
- Power - Max
- 400 mW
- Frequency - Transition
- 130MHz
- Transistor Type
- PNP
- Operating Temperature
- 150°C (TJ)
- Current - Collector (Ic) (Max)
- 100 mA
- Voltage - Collector Emitter Breakdown (Max)
- 90 V
- Vce Saturation (Max) @ Ib, Ic
- 150mV @ 1mA, 10mA
- Mounting Type
- Through Hole
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package
- TO-92
- Packaging
- Bulk
Documentation and references
Documentation can be discussed with your inquiry.
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