Component information
2SA1955FVBTPL3Z
Toshiba Semiconductor and Storage 2SA1955FVBTPL3Z: Single Bipolar Transistors. Package / Case: SOT-723. Supplier Device Package: VESM.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
- Mfr
- Toshiba Semiconductor and Storage
- Part Status
- Obsolete
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 300 @ 10mA, 2V
- Power - Max
- 100 mW
- Frequency - Transition
- 130MHz
- Operating Temperature
- 150°C (TJ)
- Transistor Type
- PNP
- Current - Collector (Ic) (Max)
- 400 mA
- Voltage - Collector Emitter Breakdown (Max)
- 12 V
- Vce Saturation (Max) @ Ib, Ic
- 250mV @ 10mA, 200mA
- Current - Collector Cutoff (Max)
- 100nA (ICBO)
- Mounting Type
- Surface Mount
- Package / Case
- SOT-723
- Supplier Device Package
- VESM
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Base Product Number
- 2SA1955
Documentation and references
Documentation can be discussed with your inquiry.
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