Component information
2SB1032K-E
Renesas Electronics Corporation 2SB1032K-E: Single Bipolar Transistors. Package / Case: TO-3P-3, SC-65-3. Supplier Device Package: TO-3P.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
- Mfr
- Renesas Electronics Corporation
- Part Status
- Active
- Current - Collector Cutoff (Max)
- 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 1000 @ 5A, 3V
- Power - Max
- 80 W
- Operating Temperature
- 150°C (TJ)
- Transistor Type
- PNP - Darlington
- Current - Collector (Ic) (Max)
- 10 A
- Voltage - Collector Emitter Breakdown (Max)
- 120 V
- Vce Saturation (Max) @ Ib, Ic
- 3V @ 100mA, 10A
- Mounting Type
- Through Hole
- Package / Case
- TO-3P-3, SC-65-3
- Supplier Device Package
- TO-3P
- Packaging
- Bulk
Documentation and references
Documentation can be discussed with your inquiry.
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