Component information
2SB1202T-E
2SB1202T-E component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 200 @ 100mA, 2V
- Mfr
- onsemi
- Power - Max
- 1 W
- Packaging
- Bulk
- Frequency - Transition
- 150MHz
- Part Status
- Obsolete
- Operating Temperature
- 150°C (TJ)
- Transistor Type
- PNP
- Mounting Type
- Through Hole
- Current - Collector (Ic) (Max)
- 3 A
- Package / Case
- TO-251-3 Short Leads, IPAK, TO-251AA
- Voltage - Collector Emitter Breakdown (Max)
- 50 V
- Supplier Device Package
- TP
- Vce Saturation (Max) @ Ib, Ic
- 700mV @ 100mA, 2A
- Base Product Number
- 2SB1202
- Current - Collector Cutoff (Max)
- 1µA (ICBO)
Documentation and references
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