Component information
2SB1302S-TD-E
2SB1302S-TD-E component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 100 @ 500mA, 2V
- Mfr
- onsemi
- Power - Max
- 1.3 W
- Packaging
- Tape & Reel (TR)
- Frequency - Transition
- 320MHz
- Part Status
- Obsolete
- Operating Temperature
- 150°C (TJ)
- Transistor Type
- PNP
- Mounting Type
- Surface Mount
- Current - Collector (Ic) (Max)
- 5 A
- Package / Case
- TO-243AA
- Voltage - Collector Emitter Breakdown (Max)
- 20 V
- Supplier Device Package
- PCP
- Vce Saturation (Max) @ Ib, Ic
- 500mV @ 60mA, 3A
- Base Product Number
- 2SB1302
- Current - Collector Cutoff (Max)
- 500nA (ICBO)
Documentation and references
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