Component information
2SB647CTZ-E
Renesas Electronics Corporation 2SB647CTZ-E: Single Bipolar Transistors. Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads. Supplier Device Package: TO-92MOD.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
- Mfr
- Renesas Electronics Corporation
- Part Status
- Active
- Current - Collector Cutoff (Max)
- 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 100 @ 150mA, 5V
- Power - Max
- 900 mW
- Frequency - Transition
- 140MHz
- Transistor Type
- PNP
- Operating Temperature
- 150°C (TJ)
- Current - Collector (Ic) (Max)
- 1 A
- Voltage - Collector Emitter Breakdown (Max)
- 80 V
- Vce Saturation (Max) @ Ib, Ic
- 1V @ 50mA, 500mA
- Mounting Type
- Through Hole
- Package / Case
- TO-226-3, TO-92-3 Long Body, Formed Leads
- Supplier Device Package
- TO-92MOD
- Packaging
- Bulk
Documentation and references
Documentation can be discussed with your inquiry.
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