Component information
2SB857C-E
Renesas Electronics Corporation 2SB857C-E: Single Bipolar Transistors. Package / Case: TO-220-3. Supplier Device Package: TO-220AB.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
- Mfr
- Renesas Electronics Corporation
- Part Status
- Active
- Current - Collector Cutoff (Max)
- 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 60 @ 1A, 4V
- Power - Max
- 40 W
- Frequency - Transition
- 15MHz
- Transistor Type
- PNP
- Operating Temperature
- 150°C (TJ)
- Current - Collector (Ic) (Max)
- 4 A
- Voltage - Collector Emitter Breakdown (Max)
- 50 V
- Vce Saturation (Max) @ Ib, Ic
- 1V @ 200mA, 2A
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Supplier Device Package
- TO-220AB
- Packaging
- Bulk
Documentation and references
Documentation can be discussed with your inquiry.
Request a quotation
Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.
Prepare an RFQ