Component information
2SB860-E
Renesas Electronics Corporation 2SB860-E: Single Bipolar Transistors. Package / Case: TO-220-3. Supplier Device Package: TO-220AB.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
- Mfr
- Renesas Electronics Corporation
- Part Status
- Active
- Current - Collector Cutoff (Max)
- 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 50 @ 500mA, 4V
- Power - Max
- 1.8 W
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Transistor Type
- PNP
- Current - Collector (Ic) (Max)
- 4 A
- Voltage - Collector Emitter Breakdown (Max)
- 100 V
- Vce Saturation (Max) @ Ib, Ic
- 1V @ 100mA, 1A
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Supplier Device Package
- TO-220AB
- Packaging
- Bulk
Documentation and references
Documentation can be discussed with your inquiry.
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