Component information
2SC1009A-T1B-AT
Renesas Electronics Corporation 2SC1009A-T1B-AT: Bipolar RF Transistors. Package / Case: TO-236-3, SC-59, SOT-23-3. Supplier Device Package: SC-59.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar RF Transistors
- Manufacturer
- Renesas Electronics Corporation
- Part Status
- Active
- Power - Max
- 150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 60 @ 1mA, 6V
- Current - Collector (Ic) (Max)
- 50mA
- Operating Temperature
- 125°C (TJ)
- Transistor Type
- NPN
- Voltage - Collector Emitter Breakdown (Max)
- 30V
- Frequency - Transition
- 250MHz
- Noise Figure (dB Typ @ f)
- 2dB @ 1MHz
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Supplier Device Package
- SC-59
- Packaging
- Bulk
Documentation and references
Documentation can be discussed with your inquiry.
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