Component information
2SC2735JTR-E
Renesas Electronics Corporation 2SC2735JTR-E: Bipolar RF Transistors. Package / Case: TO-236-3, SC-59, SOT-23-3. Supplier Device Package: 3-MPAK.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar RF Transistors
- Manufacturer
- Renesas Electronics Corporation
- Part Status
- Active
- Gain
- 21dB
- Power - Max
- 150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 40 @ 10mA, 10V
- Current - Collector (Ic) (Max)
- 50mA
- Transistor Type
- NPN
- Operating Temperature
- 150°C (TJ)
- Voltage - Collector Emitter Breakdown (Max)
- 20V
- Frequency - Transition
- 1.2GHz
- Noise Figure (dB Typ @ f)
- 6.5dB @ 200MHz
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Supplier Device Package
- 3-MPAK
- Packaging
- Bulk
Documentation and references
Documentation can be discussed with your inquiry.
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