Component information
2SC3583-T1B-A
Renesas Electronics Corporation 2SC3583-T1B-A: Bipolar RF Transistors. Package / Case: TO-236-3, SC-59, SOT-23-3. Supplier Device Package: SOT23-3 (TO-236).
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar RF Transistors
- Manufacturer
- Renesas Electronics Corporation
- Part Status
- Obsolete
- Gain
- 13dB
- Power - Max
- 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 50 @ 20mA, 8V
- Current - Collector (Ic) (Max)
- 65mA
- Transistor Type
- NPN
- Operating Temperature
- 150°C (TJ)
- Voltage - Collector Emitter Breakdown (Max)
- 10V
- Frequency - Transition
- 9GHz
- Noise Figure (dB Typ @ f)
- 1.2dB @ 1GHz
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Supplier Device Package
- SOT23-3 (TO-236)
- Packaging
- Bulk
Documentation and references
Documentation can be discussed with your inquiry.
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