Component information
2SC5065-Y(TE85L,F)
2SC5065-Y(TE85L,F) component information and product attributes.
Product information
- Manufacturer
- Toshiba Semiconductor and Storage
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar RF Transistors
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar RF Transistors
- Power - Max
- 100mW
- Manufacturer
- Toshiba Semiconductor and Storage
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 120 @ 10mA, 5V
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Current - Collector (Ic) (Max)
- 30mA
- Part Status
- Obsolete
- Operating Temperature
- 125°C (TJ)
- Transistor Type
- NPN
- Mounting Type
- Surface Mount
- Voltage - Collector Emitter Breakdown (Max)
- 12V
- Package / Case
- SC-70, SOT-323
- Frequency - Transition
- 7GHz
- Supplier Device Package
- SC-70
- Noise Figure (dB Typ @ f)
- 1.1dB @ 1GHz
- Base Product Number
- 2SC5065
- Gain
- 12dB ~ 17dB
Documentation and references
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