Component information
2SD2150T100R
2SD2150T100R component information and product attributes.
Product information
- Manufacturer
- Rohm Semiconductor
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 180 @ 100mA, 2V
- Mfr
- Rohm Semiconductor
- Power - Max
- 500 mW
- Packaging
- Tape & Reel (TR)
- Frequency - Transition
- 290MHz
- Part Status
- Not For New Designs
- Operating Temperature
- 150°C (TJ)
- Transistor Type
- NPN
- Mounting Type
- Surface Mount
- Current - Collector (Ic) (Max)
- 3 A
- Package / Case
- TO-243AA
- Voltage - Collector Emitter Breakdown (Max)
- 20 V
- Supplier Device Package
- MPT3
- Vce Saturation (Max) @ Ib, Ic
- 500mV @ 100mA, 2A
- Base Product Number
- 2SD2150
- Current - Collector Cutoff (Max)
- 100µA (ICBO)
Documentation and references
Documentation can be discussed with your inquiry.
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