Component information
2SD826G
2SD826G component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
- Current - Collector Cutoff (Max)
- 1µA (ICBO)
- Mfr
- onsemi
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 280 @ 500mA, 2V
- Packaging
- Bulk
- Power - Max
- 1 W
- Part Status
- Active
- Frequency - Transition
- 120MHz
- Transistor Type
- NPN
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Current - Collector (Ic) (Max)
- 5 A
- Mounting Type
- Through Hole
- Voltage - Collector Emitter Breakdown (Max)
- 20 V
- Package / Case
- TO-225AA, TO-126-3
- Vce Saturation (Max) @ Ib, Ic
- 500mV @ 60mA, 3A
- Supplier Device Package
- TO-126
Documentation and references
Documentation can be discussed with your inquiry.
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