Component information
2SD863F
2SD863F component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
- Current - Collector Cutoff (Max)
- 1µA (ICBO)
- Mfr
- onsemi
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 160 @ 50mA, 2V
- Packaging
- Bulk
- Power - Max
- 900 mW
- Part Status
- Active
- Frequency - Transition
- 150MHz
- Transistor Type
- NPN
- Operating Temperature
- 150°C (TJ)
- Current - Collector (Ic) (Max)
- 1 A
- Mounting Type
- Through Hole
- Voltage - Collector Emitter Breakdown (Max)
- 50 V
- Package / Case
- TO-226-3, TO-92-3 Long Body
- Vce Saturation (Max) @ Ib, Ic
- 500mV @ 50mA, 500mA
- Supplier Device Package
- 3-MP
Documentation and references
Documentation can be discussed with your inquiry.
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