Component information
2SJ655
2SJ655 component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Rds On (Max) @ Id, Vgs
- 136mOhm @ 6A, 10V
- Mfr
- onsemi
- Gate Charge (Qg) (Max) @ Vgs
- 41 nC @ 10 V
- Packaging
- Bulk
- Input Capacitance (Ciss) (Max) @ Vds
- 2090 pF @ 20 V
- Part Status
- Obsolete
- Power Dissipation (Max)
- 2W (Ta), 25W (Tc)
- FET Type
- P-Channel
- Operating Temperature
- 150°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Mounting Type
- Through Hole
- Drain to Source Voltage (Vdss)
- 100 V
- Supplier Device Package
- TO-220ML
- Current - Continuous Drain (Id) @ 25°C
- 12A (Ta)
- Package / Case
- TO-220-3 Full Pack
Documentation and references
Documentation can be discussed with your inquiry.
Request a quotation
Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.
Prepare an RFQ