2SK2009TE85LF

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Toshiba Semiconductor and Storage

Part Status

Active

Vgs(th) (Max) @ Id

1.5V @ 100µA

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

70 pF @ 3 V

Power Dissipation (Max)

200mW (Ta)

FET Type

N-Channel

Operating Temperature

150°C (TJ)

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30 V

Current - Continuous Drain (Id) @ 25°C

200mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V

Rds On (Max) @ Id, Vgs

2Ohm @ 50mA, 2.5V

Mounting Type

Surface Mount

Supplier Device Package

S-Mini

Package / Case

TO-236-3, SC-59, SOT-23-3

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

2SK2009