Component information
2SK3614-Q-TD-E
2SK3614-Q-TD-E component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Vgs(th) (Max) @ Id
- 2.6V @ 1mA
- Mfr
- onsemi
- Gate Charge (Qg) (Max) @ Vgs
- 7.8 nC @ 10 V
- Packaging
- Bulk
- Vgs (Max)
- ±20V
- Part Status
- Active
- Input Capacitance (Ciss) (Max) @ Vds
- 300 pF @ 20 V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 1.5W (Ta), 3.5W (Tc)
- Technology
- MOSFET (Metal Oxide)
- Operating Temperature
- 150°C
- Drain to Source Voltage (Vdss)
- 60 V
- Mounting Type
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C
- 4A (Ta)
- Supplier Device Package
- PCP
- Drive Voltage (Max Rds On, Min Rds On)
- 4V, 10V
- Package / Case
- TO-243AA
- Rds On (Max) @ Id, Vgs
- 145mOhm @ 2A, 10V
Documentation and references
Documentation can be discussed with your inquiry.
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