Component information
2SK3666-3-TB-E
2SK3666-3-TB-E component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; JFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; JFETs
- Input Capacitance (Ciss) (Max) @ Vds
- 4pF @ 10V
- Manufacturer
- onsemi
- Resistance - RDS(On)
- 200 Ohms
- Packaging
- Tape & Reel (TR)
- Power - Max
- 200 mW
- Part Status
- Obsolete
- Operating Temperature
- 150°C (TJ)
- FET Type
- N-Channel
- Mounting Type
- Surface Mount
- Drain to Source Voltage (Vdss)
- 30 V
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Current - Drain (Idss) @ Vds (Vgs=0)
- 1.2 mA @ 10 V
- Supplier Device Package
- SMCP
- Current Drain (Id) - Max
- 10 mA
- Base Product Number
- 2SK3666
- Voltage - Cutoff (VGS off) @ Id
- 180 mV @ 1 µA
Documentation and references
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