Component information
AFGB30T65RQDN
onsemi AFGB30T65RQDN: Single IGBTs. Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB. Supplier Device Package: TO-263 (D2PAK).
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; IGBTs; Single IGBTs
- Manufacturer
- onsemi
- Part Status
- Active
- Input Type
- Standard
- Gate Charge
- 38 nC
- Td (on/off) @ 25°C
- 18ns/48ns
- Test Condition
- 400V, 30A, 2.5Ohm, 15V
- IGBT Type
- Field Stop
- Reverse Recovery Time (trr)
- 44 ns
- Voltage - Collector Emitter Breakdown (Max)
- 650 V
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Current - Collector (Ic) (Max)
- 68 A
- Grade
- Automotive
- Current - Collector Pulsed (Icm)
- 120 A
- Qualification
- AEC-Q101
- Vce(on) (Max) @ Vge, Ic
- 1.82V @ 15V, 30A
- Power - Max
- 235.48 W
- Switching Energy
- 780µJ (on), 560µJ (off)
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package
- TO-263 (D2PAK)
- Packaging
- Bulk
Documentation and references
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