Component information
AIMBG120R160M1XTMA1
Infineon Technologies AIMBG120R160M1XTMA1: Single FETs, MOSFETs. Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA. Supplier Device Package: PG-TO263-7-12.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Mfr
- Infineon Technologies
- Series
- CoolSiC™
- Part Status
- Active
- Gate Charge (Qg) (Max) @ Vgs
- 14 nC @ 20 V
- Vgs (Max)
- +23V, -5V
- Input Capacitance (Ciss) (Max) @ Vds
- 350 pF @ 800 V
- Power Dissipation (Max)
- 106W (Tc)
- Operating Temperature
- -55°C ~ 175°C (TJ)
- FET Type
- N-Channel
- Grade
- Automotive
- Technology
- SiCFET (Silicon Carbide)
- Qualification
- AEC-Q101
- Drain to Source Voltage (Vdss)
- 1200 V
- Current - Continuous Drain (Id) @ 25°C
- 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 18V, 20V
- Rds On (Max) @ Id, Vgs
- 200mOhm @ 5A, 20V
- Vgs(th) (Max) @ Id
- 5.1V @ 1.6mA
- Mounting Type
- Surface Mount
- Supplier Device Package
- PG-TO263-7-12
- Package / Case
- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Base Product Number
- AIMBG120
Documentation and references
Documentation can be discussed with your inquiry.
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