Component information
AIMZH120R010M1TXKSA1
Infineon Technologies AIMZH120R010M1TXKSA1: Single FETs, MOSFETs. Package / Case: TO-247-4. Supplier Device Package: PG-TO247-4-11.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Mfr
- Infineon Technologies
- Part Status
- Active
- Gate Charge (Qg) (Max) @ Vgs
- 178 nC @ 20 V
- Vgs (Max)
- +23V, -5V
- Input Capacitance (Ciss) (Max) @ Vds
- 5703 pF @ 800 V
- Power Dissipation (Max)
- 750W (Tc)
- FET Type
- N-Channel
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Technology
- SiCFET (Silicon Carbide)
- Grade
- Automotive
- Drain to Source Voltage (Vdss)
- 1200 V
- Qualification
- AEC-Q101
- Current - Continuous Drain (Id) @ 25°C
- 202A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 18V, 20V
- Rds On (Max) @ Id, Vgs
- 11.3mOhm @ 93A, 20V
- Vgs(th) (Max) @ Id
- 5.1V @ 30mA
- Mounting Type
- Through Hole
- Supplier Device Package
- PG-TO247-4-11
- Package / Case
- TO-247-4
- Packaging
- Tube
Documentation and references
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