AIMZHN120R080M1TXKSA1

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Infineon Technologies

Part Status

Last Time Buy

Gate Charge (Qg) (Max) @ Vgs

24 nC @ 20 V

Vgs (Max)

+23V, -5V

Input Capacitance (Ciss) (Max) @ Vds

671 pF @ 800 V

Power Dissipation (Max)

169W (Tc)

FET Type

N-Channel

Operating Temperature

-55°C ~ 175°C (TJ)

Technology

SiCFET (Silicon Carbide)

Grade

Automotive

Drain to Source Voltage (Vdss)

1200 V

Qualification

AEC-Q101

Current - Continuous Drain (Id) @ 25°C

31A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

18V, 20V

Rds On (Max) @ Id, Vgs

100mOhm @ 10A, 20V

Vgs(th) (Max) @ Id

5.1V @ 3.3mA

Mounting Type

Through Hole

Supplier Device Package

PG-TO247-4-14

Package / Case

TO-247-4

Packaging

Tube