Component information
AMM12S36LB1Z2XKMA1
Infineon Technologies AMM12S36LB1Z2XKMA1: FET, MOSFET Arrays. Package / Case: 32-PowerDIP Module (1.264", 32.10mm). Supplier Device Package: DIP 44x28DA.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Manufacturer
- Infineon Technologies
- Series
- CIPOS™
- Part Status
- Active
- Vgs(th) (Max) @ Id
- 5.1V @ 5.7mA
- Gate Charge (Qg) (Max) @ Vgs
- 44nC @ 18V
- Input Capacitance (Ciss) (Max) @ Vds
- 1415pF @ 800V
- Power - Max
- 176W
- Operating Temperature
- -40°C ~ 175°C
- Technology
- Silicon Carbide (SiC)
- Grade
- Automotive
- Configuration
- 6 N-Channel (Three Phase Inverter)
- Qualification
- AEC-Q101
- Drain to Source Voltage (Vdss)
- 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C
- 45A (Tc)
- Rds On (Max) @ Id, Vgs
- 50.8mOhm @ 18.2A, 18V
- Mounting Type
- Through Hole
- Package / Case
- 32-PowerDIP Module (1.264", 32.10mm)
- Supplier Device Package
- DIP 44x28DA
- Packaging
- Tube
Documentation and references
Documentation can be discussed with your inquiry.
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