AOT9N50

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Alpha & Omega Semiconductor Inc.

Part Status

Not For New Designs

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

28 nC @ 10 V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1042 pF @ 25 V

FET Type

N-Channel

Power Dissipation (Max)

192W (Tc)

Technology

MOSFET (Metal Oxide)

Operating Temperature

-55°C ~ 150°C (TJ)

Drain to Source Voltage (Vdss)

500 V

Current - Continuous Drain (Id) @ 25°C

9A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

850mOhm @ 4.5A, 10V

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

Packaging

Tube

Base Product Number

AOT9