Component information
APT35GN120BG
APT35GN120BG component information and product attributes.
Product information
- Manufacturer
- Microchip Technology
- Category
- Discrete Semiconductor Products; Transistors; IGBTs; Single IGBTs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; IGBTs; Single IGBTs
- Switching Energy
- 2.315mJ (off)
- Manufacturer
- Microchip Technology
- Input Type
- Standard
- Packaging
- Tube
- Gate Charge
- 220 nC
- Part Status
- Active
- Td (on/off) @ 25°C
- 24ns/300ns
- IGBT Type
- NPT, Trench Field Stop
- Test Condition
- 800V, 35A, 2.2Ohm, 15V
- Voltage - Collector Emitter Breakdown (Max)
- 1200 V
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Current - Collector (Ic) (Max)
- 94 A
- Mounting Type
- Through Hole
- Current - Collector Pulsed (Icm)
- 105 A
- Package / Case
- TO-247-3
- Vce(on) (Max) @ Vge, Ic
- 2.1V @ 15V, 35A
- Supplier Device Package
- TO-247 [B]
- Power - Max
- 379 W
- Base Product Number
- APT35GN120
Documentation and references
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