Component information
APT35GP120B2D2G
Microchip Technology APT35GP120B2D2G: Single IGBTs. Package / Case: TO-247-3 Variant. Supplier Device Package: T-MAX™ [B2].
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; IGBTs; Single IGBTs
- Manufacturer
- Microchip Technology
- Series
- POWER MOS 7®
- Part Status
- Active
- Switching Energy
- 1mJ (on), 1.185mJ (off)
- Input Type
- Standard
- Gate Charge
- 150 nC
- Td (on/off) @ 25°C
- 14ns/99ns
- Test Condition
- 800V, 35A, 5Ohm, 15V
- IGBT Type
- PT
- Reverse Recovery Time (trr)
- 85 ns
- Voltage - Collector Emitter Breakdown (Max)
- 1200 V
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Current - Collector (Ic) (Max)
- 96 A
- Current - Collector Pulsed (Icm)
- 140 A
- Vce(on) (Max) @ Vge, Ic
- 3.9V @ 15V, 35A
- Power - Max
- 540 W
- Mounting Type
- Through Hole
- Package / Case
- TO-247-3 Variant
- Supplier Device Package
- T-MAX™ [B2]
- Packaging
- Tube
- Base Product Number
- APT35GP120
Documentation and references
Documentation can be discussed with your inquiry.
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