Component information
APT35GP120B2DQ2G
Microchip Technology APT35GP120B2DQ2G: Single IGBTs. Package / Case: TO-247-3 Variant. Series: POWER MOS 7®.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; IGBTs; Single IGBTs
- Manufacturer
- Microchip Technology
- Series
- POWER MOS 7®
- Part Status
- Active
- Power - Max
- 543 W
- Switching Energy
- 750µJ (on), 680µJ (off)
- Input Type
- Standard
- Gate Charge
- 150 nC
- Td (on/off) @ 25°C
- 16ns/95ns
- IGBT Type
- PT
- Test Condition
- 600V, 35A, 4.3Ohm, 15V
- Voltage - Collector Emitter Breakdown (Max)
- 1200 V
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Current - Collector (Ic) (Max)
- 96 A
- Current - Collector Pulsed (Icm)
- 140 A
- Vce(on) (Max) @ Vge, Ic
- 3.9V @ 15V, 35A
- Mounting Type
- Through Hole
- Package / Case
- TO-247-3 Variant
- Packaging
- Tube
- Base Product Number
- APT35GP120
Documentation and references
Request a quotation
Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.
Prepare an RFQ