Component information
APT65GP60B2G
Microchip Technology APT65GP60B2G: Single IGBTs. Package / Case: TO-247-3 Variant. Series: POWER MOS 7®.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; IGBTs; Single IGBTs
- Manufacturer
- Microchip Technology
- Series
- POWER MOS 7®
- Part Status
- Active
- Power - Max
- 833 W
- Switching Energy
- 605µJ (on), 896µJ (off)
- Input Type
- Standard
- Gate Charge
- 210 nC
- Td (on/off) @ 25°C
- 30ns/91ns
- IGBT Type
- PT
- Test Condition
- 400V, 65A, 5Ohm, 15V
- Voltage - Collector Emitter Breakdown (Max)
- 600 V
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Current - Collector (Ic) (Max)
- 100 A
- Current - Collector Pulsed (Icm)
- 250 A
- Vce(on) (Max) @ Vge, Ic
- 2.7V @ 15V, 65A
- Mounting Type
- Through Hole
- Package / Case
- TO-247-3 Variant
- Packaging
- Tube
- Base Product Number
- APT65GP60
Documentation and references
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