Component information
AT-41535G
Broadcom Limited AT-41535G: Bipolar RF Transistors. Package / Case: 4-SMD (35 micro-X). Supplier Device Package: 35 micro-X.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar RF Transistors
- Manufacturer
- Broadcom Limited
- Part Status
- Obsolete
- Gain
- 10dB ~ 18dB
- Power - Max
- 500mW
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 30 @ 10mA, 8V
- Current - Collector (Ic) (Max)
- 60mA
- Transistor Type
- NPN
- Operating Temperature
- 150°C (TJ)
- Voltage - Collector Emitter Breakdown (Max)
- 12V
- Frequency - Transition
- 8GHz
- Noise Figure (dB Typ @ f)
- 1.3dB ~ 3dB @ 1GHz ~ 4GHz
- Mounting Type
- Surface Mount
- Package / Case
- 4-SMD (35 micro-X)
- Supplier Device Package
- 35 micro-X
- Packaging
- Bulk
Documentation and references
Documentation can be discussed with your inquiry.
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