Component information
AT-42010
Broadcom Limited AT-42010: Bipolar RF Transistors. Package / Case: 4-SMD (100 mil). Gain: 10dB ~ 13.5dB.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar RF Transistors
- Manufacturer
- Broadcom Limited
- Part Status
- Obsolete
- Gain
- 10dB ~ 13.5dB
- Power - Max
- 600mW
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 30 @ 35mA, 8V
- Current - Collector (Ic) (Max)
- 80mA
- Transistor Type
- NPN
- Operating Temperature
- 200°C (TJ)
- Voltage - Collector Emitter Breakdown (Max)
- 12V
- Frequency - Transition
- 8GHz
- Noise Figure (dB Typ @ f)
- 1.9dB ~ 3dB @ 2GHz ~ 4GHz
- Mounting Type
- Surface Mount
- Package / Case
- 4-SMD (100 mil)
- Packaging
- Bulk
Documentation and references
Documentation can be discussed with your inquiry.
Request a quotation
Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.
Prepare an RFQ