Component information
AUIRF1404S
AUIRF1404S component information and product attributes.
Product information
- Manufacturer
- Infineon Technologies
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Mfr
- Infineon Technologies
- Gate Charge (Qg) (Max) @ Vgs
- 200 nC @ 10 V
- Series
- HEXFET®
- Vgs (Max)
- ±20V
- Packaging
- Tube
- Input Capacitance (Ciss) (Max) @ Vds
- 7360 pF @ 25 V
- Part Status
- Obsolete
- Power Dissipation (Max)
- 3.8W (Ta), 200W (Tc)
- FET Type
- N-Channel
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Grade
- Automotive
- Drain to Source Voltage (Vdss)
- 40 V
- Qualification
- AEC-Q101
- Current - Continuous Drain (Id) @ 25°C
- 75A (Tc)
- Mounting Type
- Surface Mount
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Supplier Device Package
- D2PAK
- Rds On (Max) @ Id, Vgs
- 4mOhm @ 95A, 10V
- Package / Case
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Documentation and references
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