Component information

AUIRF2804S-7P

AUIRF2804S-7P component information and product attributes.

Product information

Manufacturer
Infineon Technologies
Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs
260 nC @ 10 V
Mfr
Infineon Technologies
Vgs (Max)
±20V
Series
HEXFET®
Input Capacitance (Ciss) (Max) @ Vds
6930 pF @ 25 V
Packaging
Tube
Power Dissipation (Max)
330W (Tc)
Part Status
Obsolete
Operating Temperature
-55°C ~ 175°C (TJ)
FET Type
N-Channel
Grade
Automotive
Technology
MOSFET (Metal Oxide)
Qualification
AEC-Q101
Drain to Source Voltage (Vdss)
40 V
Mounting Type
Surface Mount
Current - Continuous Drain (Id) @ 25°C
240A (Tc)
Supplier Device Package
D2PAK (7-Lead)
Drive Voltage (Max Rds On, Min Rds On)
10V
Package / Case
TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Rds On (Max) @ Id, Vgs
1.6mOhm @ 160A, 10V
Base Product Number
AUIRF2804
Vgs(th) (Max) @ Id
4V @ 250µA

Documentation and references

Manufacturer document ↗

Distributor reference ↗

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