Component information
AUIRF7759L2TR
Infineon Technologies AUIRF7759L2TR: Single FETs, MOSFETs. Package / Case: DirectFET™ Isometric L8. Supplier Device Package: DirectFET™ Isometric L8.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Mfr
- Infineon Technologies
- Series
- HEXFET®
- Part Status
- Last Time Buy
- Gate Charge (Qg) (Max) @ Vgs
- 300 nC @ 10 V
- Vgs (Max)
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds
- 12222 pF @ 25 V
- Power Dissipation (Max)
- 3.3W (Ta), 125W (Tc)
- Operating Temperature
- -55°C ~ 175°C (TJ)
- FET Type
- N-Channel
- Grade
- Automotive
- Technology
- MOSFET (Metal Oxide)
- Qualification
- AEC-Q101
- Drain to Source Voltage (Vdss)
- 75 V
- Current - Continuous Drain (Id) @ 25°C
- 375A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Rds On (Max) @ Id, Vgs
- 2.3mOhm @ 96A, 10V
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Mounting Type
- Surface Mount
- Supplier Device Package
- DirectFET™ Isometric L8
- Package / Case
- DirectFET™ Isometric L8
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Base Product Number
- AUIRF7759
Documentation and references
Documentation can be discussed with your inquiry.
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