Component information
BA12003BF-E2
BA12003BF-E2 component information and product attributes.
Product information
- Manufacturer
- Rohm Semiconductor
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar Transistor Arrays
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar Transistor Arrays
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 1000 @ 350mA, 2V
- Manufacturer
- Rohm Semiconductor
- Power - Max
- 625mW
- Packaging
- Tape & Reel (TR)
- Operating Temperature
- -25°C ~ 75°C
- Part Status
- Obsolete
- Mounting Type
- Surface Mount
- Transistor Type
- 7 NPN Darlington
- Package / Case
- 16-SOIC (0.173", 4.40mm Width)
- Voltage - Collector Emitter Breakdown (Max)
- 60V
- Supplier Device Package
- 16-SOP
- Vce Saturation (Max) @ Ib, Ic
- 1.6V @ 500µA, 350mA
- Base Product Number
- BA12003
Documentation and references
Documentation can be discussed with your inquiry.
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