Component information
BBS3002-DL-1E
BBS3002-DL-1E component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Gate Charge (Qg) (Max) @ Vgs
- 280 nC @ 10 V
- Mfr
- onsemi
- Vgs (Max)
- ±20V
- Packaging
- Tape & Reel (TR)
- Input Capacitance (Ciss) (Max) @ Vds
- 13200 pF @ 20 V
- Part Status
- Obsolete
- Power Dissipation (Max)
- 90W (Tc)
- FET Type
- P-Channel
- Operating Temperature
- 150°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Mounting Type
- Surface Mount
- Drain to Source Voltage (Vdss)
- 60 V
- Supplier Device Package
- TO-263 (D2PAK)
- Current - Continuous Drain (Id) @ 25°C
- 100A (Ta)
- Package / Case
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Drive Voltage (Max Rds On, Min Rds On)
- 4V, 10V
- Base Product Number
- BBS3002
- Rds On (Max) @ Id, Vgs
- 5.8mOhm @ 50A, 10V
Documentation and references
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