Component information
BC807-25QAZ
NXP USA Inc. BC807-25QAZ: Single Bipolar Transistors. Package / Case: 3-XDFN Exposed Pad. Supplier Device Package: DFN1010D-3.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
- Mfr
- NXP USA Inc.
- Part Status
- Active
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 40 @ 500mA, 1V
- Power - Max
- 900 mW
- Frequency - Transition
- 80MHz
- Operating Temperature
- 150°C (TJ)
- Transistor Type
- PNP
- Grade
- Automotive
- Current - Collector (Ic) (Max)
- 500 mA
- Qualification
- AEC-Q101
- Voltage - Collector Emitter Breakdown (Max)
- 45 V
- Vce Saturation (Max) @ Ib, Ic
- 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max)
- 100nA (ICBO)
- Mounting Type
- Surface Mount
- Package / Case
- 3-XDFN Exposed Pad
- Supplier Device Package
- DFN1010D-3
- Packaging
- Bulk
Documentation and references
Documentation can be discussed with your inquiry.
Request a quotation
Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.
Prepare an RFQ