Component information
BC847QAPN147
NXP USA Inc. BC847QAPN147: Bipolar Transistor Arrays. Package / Case: 6-XFDFN Exposed Pad. Supplier Device Package: DFN1010B-6.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar Transistor Arrays
- Manufacturer
- NXP USA Inc.
- Part Status
- Active
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 200 @ 2mA, 5V
- Power - Max
- 350mW
- Frequency - Transition
- 100MHz
- Operating Temperature
- 150°C (TJ)
- Transistor Type
- 1 NPN, 1 PNP
- Grade
- Automotive
- Current - Collector (Ic) (Max)
- 100mA
- Qualification
- AEC-Q101
- Voltage - Collector Emitter Breakdown (Max)
- 45V
- Vce Saturation (Max) @ Ib, Ic
- 100mV @ 500µA, 10mA
- Current - Collector Cutoff (Max)
- 15nA (ICBO)
- Mounting Type
- Surface Mount
- Package / Case
- 6-XFDFN Exposed Pad
- Supplier Device Package
- DFN1010B-6
- Packaging
- Bulk
Documentation and references
Documentation can be discussed with your inquiry.
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