Component information
BC847QASX
NXP USA Inc. BC847QASX: Bipolar Transistor Arrays. Package / Case: 6-XFDFN Exposed Pad. Supplier Device Package: DFN1010B-6.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar Transistor Arrays
- Manufacturer
- NXP USA Inc.
- Part Status
- Discontinued at DigiKey
- Power - Max
- 230mW
- Frequency - Transition
- 100MHz
- Operating Temperature
- 150°C (TJ)
- Grade
- Automotive
- Transistor Type
- 1 NPN, 1 PNP Complementary
- Qualification
- AEC-Q101
- Current - Collector (Ic) (Max)
- 100mA
- Voltage - Collector Emitter Breakdown (Max)
- 45V
- Vce Saturation (Max) @ Ib, Ic
- 100mV @ 500µA, 10mA
- Current - Collector Cutoff (Max)
- 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 200 @ 2mA, 5V
- Mounting Type
- Surface Mount
- Package / Case
- 6-XFDFN Exposed Pad
- Supplier Device Package
- DFN1010B-6
- Packaging
- Tape & Reel (TR)
- Base Product Number
- BC847
Documentation and references
Documentation can be discussed with your inquiry.
Request a quotation
Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.
Prepare an RFQ