Component information
BC850CE6359HTMA1
Infineon Technologies BC850CE6359HTMA1: Single Bipolar Transistors. Package / Case: TO-236-3, SC-59, SOT-23-3. Supplier Device Package: PG-SOT23.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
- Mfr
- Infineon Technologies
- Part Status
- Active
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 420 @ 2mA, 5V
- Power - Max
- 330 mW
- Frequency - Transition
- 250MHz
- Operating Temperature
- 150°C (TJ)
- Transistor Type
- NPN
- Grade
- Automotive
- Current - Collector (Ic) (Max)
- 100 mA
- Qualification
- AEC-Q101
- Voltage - Collector Emitter Breakdown (Max)
- 45 V
- Vce Saturation (Max) @ Ib, Ic
- 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)
- 15nA (ICBO)
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Supplier Device Package
- PG-SOT23
- Packaging
- Bulk
Documentation and references
Documentation can be discussed with your inquiry.
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