Component information
BC856BQBZ
Nexperia USA Inc. BC856BQBZ: Single Bipolar Transistors. Package / Case: 3-XDFN Exposed Pad. Supplier Device Package: DFN1110D-3.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
- Mfr
- Nexperia USA Inc.
- Series
- BC856xQB
- Part Status
- Active
- Current - Collector Cutoff (Max)
- 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 220 @ 2mA, 5V
- Power - Max
- 340 mW
- Frequency - Transition
- 100MHz
- Operating Temperature
- 150°C (TJ)
- Transistor Type
- PNP
- Current - Collector (Ic) (Max)
- 100 mA
- Voltage - Collector Emitter Breakdown (Max)
- 65 V
- Vce Saturation (Max) @ Ib, Ic
- 650mV @ 5mA, 100mA
- Mounting Type
- Surface Mount, Wettable Flank
- Package / Case
- 3-XDFN Exposed Pad
- Supplier Device Package
- DFN1110D-3
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Base Product Number
- BC856
Documentation and references
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