Component information
BC857AQAZ
NXP USA Inc. BC857AQAZ: Single Bipolar Transistors. Package / Case: 3-XDFN Exposed Pad. Supplier Device Package: DFN1010D-3.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
- Mfr
- NXP USA Inc.
- Part Status
- Active
- Power - Max
- 280 mW
- Frequency - Transition
- 100MHz
- Operating Temperature
- 150°C (TJ)
- Grade
- Automotive
- Transistor Type
- PNP
- Qualification
- AEC-Q101
- Current - Collector (Ic) (Max)
- 100 mA
- Voltage - Collector Emitter Breakdown (Max)
- 45 V
- Vce Saturation (Max) @ Ib, Ic
- 400mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)
- 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 125 @ 2mA, 5V
- Mounting Type
- Surface Mount
- Package / Case
- 3-XDFN Exposed Pad
- Supplier Device Package
- DFN1010D-3
- Packaging
- Bulk
- Base Product Number
- BC857
Documentation and references
Documentation can be discussed with your inquiry.
Request a quotation
Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.
Prepare an RFQ