Component information
BC857QASZ
BC857QASZ component information and product attributes.
Product information
- Manufacturer
- Nexperia USA Inc.
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar Transistor Arrays
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar Transistor Arrays
- Power - Max
- 350mW
- Manufacturer
- Nexperia USA Inc.
- Frequency - Transition
- 100MHz
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Operating Temperature
- 150°C (TJ)
- Part Status
- Active
- Grade
- Automotive
- Transistor Type
- 2 PNP (Dual)
- Qualification
- AEC-Q101
- Current - Collector (Ic) (Max)
- 100mA
- Mounting Type
- Surface Mount
- Voltage - Collector Emitter Breakdown (Max)
- 45V
- Package / Case
- 6-XFDFN Exposed Pad
- Vce Saturation (Max) @ Ib, Ic
- 100mV @ 2mA, 5V
- Supplier Device Package
- DFN1010B-6
- Current - Collector Cutoff (Max)
- 15nA (ICBO)
- Base Product Number
- BC857
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 200 @ 2mA, 5V
Documentation and references
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